Phys.org

X-ray topography of threading dislocations in aluminum nitride

Wide bandgap (WBG) semiconductors are essential to our technology future. Power electronics made with WBG components overcome the upper limits on temperature, frequency, and voltage that apply to ...
IEEE

Reducing Threading Dislocation Densities in SiGe Mismatched Layers by Controllingc Strainc rate and Surface Roughness

Abstract: Further insight into strained layer relaxation processes have been achieved in this work. Effects of surface roughness, dislocation velocities, and dislocation nucleation have been ...
IEEE

Device-Based Threading Dislocation Assessment in Germanium Hetero-Epitaxy

Abstract: A review on the electrical activity of extended defects and, more specifically, threading dislocations in germanium hetero-epitaxial layers is reported here. Focus is on the impact of some ...
Compound Semiconductor

An elegant solution for SiC

Today’s commercial SiC substrates are riddled with these atomic-scale imperfections, with thousands threading through each ...
C&EN

Layer-Wise Dislocation Distribution and Stress Evolution in a GaN-Based High Electron Mobility Transistor Studied by X-ray Nanodiffraction

Department of Advanced Materials Science and Nanotechnology, University of Science and Technology of Hanoi (USTH), Vietnam Academy of Science and Technology, 18 Hoang Quoc Viet, Nghia Do, Hanoi 10000, ...